Patrick Reynaert, RF and mm-wave CMOS PAs, Espoo 3.03.2008

Time: 3.3.2008 (Monday) @ 10.15 am
Coordinates: TKK Lecture hall S3, Otakaari 5, Otaniemi, Espoo
Coffee & refreshments will be served before the talk
 
Abstract:
It is for sure a challenge to achieve high output power in a low-voltage
CMOS technology. Furthermore, the high dynamic range requirements of
wireless standards emphasize the need for efficient power control,
whereas the battery lifetime requirements put a challenge on the peak
efficiency.
The first part of this talk will focus on power combining and
linearization as key enablers for high-linearity, high-efficiency, fully
integrated and reconfigurable CMOS power amplifiers.
The second part of the talk will focus on CMOS mm-wave power amplifiers.
CMOS technology scaling, together with the availability of the 60GHz
frequency band, has spurred the interest in mm-wave CMOS circuits. CMOS,
however, operates at a low supply voltage and is not tailored for
mm-wave operation. As such, achieving sufficient output power in a
nanometer CMOS technology is non-trivial. Some fundamental challenges of
mm-wave CMOS circuit design are reviewed, followed by a discussion on
mm-wave CMOS PA design.
Bio:
Patrick Reynaert received his Ph.D. from the Katholieke Universiteit
Leuven, Belgium, in 2006.
His Ph.D. research focussed on polar modulated CMOS RF power amplifiers.
During 2006-2007, he was a post-doctoral researcher at UC Berkeley and a
member of the Berkeley Wireless Research Center, where he worked on
mm-wave CMOS circuits. During the summer of 2007, he was a visiting
researcher at Infineon Technologies, Austria, Villach, where he worked
on basestation power amplifiers.
Currently, he is an associate professor at the Katholieke Universiteit
Leuven, Dept. Electrical Engineering, and is leading the research on RF
power amplifiers and CMOS mm-wave circuits.